MIG50Q201H

silicon N Channel IGBT, intelligent power module, High speed

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Price:: US $1.00~2.00 / piece [Get Latest Price]

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PartNumber:: MIG50Q201H

Brand:: Toshiba Semiconductor - Toshiba | Pack: DIP | D/C: 11+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Total Price:: US $0

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Products Upload time: 2012-09-17

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Part Number:MIG50Q201H
US $1.00 - 2.00
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Product Summary

The MIG50Q201H is an intelligent power module, and it is silicon N Channel IGBT.

Parametrics

MIG50Q201H Absolute maximum ratings: (1)Supply voltage: 900 V at P-N power terminal; (2)Collector.emitter voltage: 1200 V; (3)Collector current: 50 A at Tc = 25℃, DC; (4)Forward current: 50 A at Tc = 25℃, DC; (5)Collector power dissipation: 300 W at Tc = 25 ℃; (6)Junction temperature: 150 ℃.

Features

MIG50Q201H Features: (1)Integrates inverter, brake power circuits & control circuits (IGBT drive units, protection units for over.current, realtime-current-control (RTC), under.voltage & over-temperature) in one package; (2)The electrodes are isolated from case; (3)High speed type IGBT : VCE (sat) = 3.5 V (Max.), toff = 2.6 μs (Max.), trr = 0.21 μs (Max.); (4)Outline : 2-110A1A; (5)Weight : 520 g.