(China (Mainland))
Product Summary
The FQPF2N60 is an N-Channel enhancement mode power field effect transistor. The FQPF2N60 is produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. The FQPF2N60 is well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
Parametrics
FQPF2N60 absolute maximum ratings: (1)VDSS Drain-Source Voltage: 600V; (2)ID Drain Current - Continuous (TC = 25℃): 2.0A; (3)- Continuous (TC = 100℃): 1.35A; (4)IDM Drain Current - Pulsed: 88A; (5)VGSS Gate-Source Voltage: ±30 V; (6)EAS Single Pulsed Avalanche Energ: 120 mJ; (7)IAR Avalanche Current: 2.0 A; (8)EAR Repetitive Avalanche Energy: 5.4 mJ; (9)dv/dt Peak Diode Recovery dv/dt: 4.5 V/ns; (10)PD Power Dissipation (TC = 25℃): 54W; (11)TJ, TSTG Operating and Storage Temperature Range: -55 to +150℃; (12)TL, Maximum lead temperature: 300℃.
Features
FQPF2N60 features: (1)2.0A, 600V, RDS(on) = 4.7Ω @VGS = 10 V; (2)Low gate charge ( typical 8.5 nC); (3)Low Crss ( typical 4.3 pF); (4)Fast switching; (5)100% avalanche tested; (6)Improved dv/dt capability.
Diagrams
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 FQPF2N60 |
Fairchild Semiconductor |
MOSFET |
Data Sheet |
Negotiable |
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FQPF2N60C |
Fairchild Semiconductor |
MOSFET 600V N-Channel Advance Q-FET |
Data Sheet |
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