Product Summary
The FQPF16N25C is a 250V N-Channel MOSFET. The N-Channel enhancement mode power field effect transistor is produced using Fairchild’s proprietary, planar stripe, DMOS technology. The FQPF16N25C is well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supplies and motor controls.
Parametrics
FQPF16N25C Absolute maximum ratings: (1)VDSS Drain-Source Voltage: 250 V; (2)ID Drain Current - Continuous (TC = 25℃): 15.6 * A; (3)IDM Drain Current - Pulsed: 62.4 * A; (4)VGSS Gate-Source Voltage: ± 30 V; (5)EAS Single Pulsed Avalanche Energy: 410 mJ; (6)IAR Avalanche Current: 15.6 A; (7)EAR Repetitive Avalanche Energy: 13.9 mJ; (8)dv/dt Peak Diode Recovery dv/dt: 5.5 V/ns; (9)TJ, TSTG Operating and Storage Temperature Range: -55℃ to +150 ℃.
Features
FQPF16N25C features: (1)15.6A, 250V, RDS(on) = 0.27Ω @ VGS = 10 V; (2)Low gate charge ( typical 41 nC); (3)Low Crss ( typical 68 pF); (4)Fast switching; (5)100% avalanche tested; (6)Improved dv/dt capability.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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FQPF16N25C |
Fairchild Semiconductor |
MOSFET N-CH/250V /16A/QFET |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
FQPF10N20 |
Fairchild Semiconductor |
MOSFET 200V N-Ch MOSFET |
Data Sheet |
Negotiable |
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FQPF10N20C |
Fairchild Semiconductor |
MOSFET 200V N-Ch MOSFET |
Data Sheet |
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FQPF10N20T |
Fairchild Semiconductor |
MOSFET |
Data Sheet |
Negotiable |
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FQPF10N50CF |
Fairchild Semiconductor |
MOSFET 500V N-Ch MOSFET |
Data Sheet |
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FQPF10N60C |
Fairchild Semiconductor |
MOSFET 600V N-Ch Q-FET advance C-Series |
Data Sheet |
Negotiable |
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FQPF10N60CF |
Fairchild Semiconductor |
MOSFET 600V N-Ch MOSFET |
Data Sheet |
Negotiable |
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